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600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 1 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited figure 1. package types of az1117c sot-223 general description the az1117c is a low dropout three-terminal regula- tor. the az1117c has been optimized for low voltage where transient response and minimum input voltage are critical. it provides curr ent limit and thermal shut- down. its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within 1%. on-chip thermal shutdown provides protection against a combination of high curr ent and ambien t temperature that would create excessive junction temperature. the az1117c is available in 1.2v, 1.5v, 1.8v, 2.5v, 3.3v, 5.0v fixed output voltage vesions and adj out- put voltage version. the fixed versions integrate the adjust resistors. it is also available in an adjustable ver- sion which can set the output voltage with two external resistors. the az1117c is available in the industry-standard to- 252-2 (1), to-252-2 (2), to-252-2 (3), to-252-2 (4), sot-89 and sot-223 power packages. features current limit: 1.0a (typ.) output noise from 10hz to 10khz: 0.003% of v out psrr at i out =300ma and f=120hz: 70db output voltage accuracy: 1% (except 1.2v version) on-chip thermal shutdown maximum quiescent current: i qmax =6ma compatible with low esr ceramic capacitor operation junction temperature: -20 to 125 o c applications usb device add-on card dvd player pc motherboard to-252-2 (1) to-252-2 (2) to-252-2 (3) sot-89 to-252-2 (4)
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 2 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited h package (sot-223) pin configuration vout input output adj/gnd 1 2 3 figure 2. pin configuration of az1117c (top view) d package (to-252-2 (1)) 1 2 3 1 2 3 input output adj/gnd input output adj/gnd input output adj/gnd (to-252-2 (2)) (to-252-2 (3)) 1 2 3 r package (sot-89) 1 2 3 input output adj/gnd vout (to-252-2 (4)) input output adj/gnd vout 1 2 3
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 3 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited figure 3. functional block diagram of az1117c thermal protection + - for adjustable output, disconnect a1 and a2, connect b input output adj/gnd a1 a2 b for fixed output, connect a1 and a2, disconnect b 2 1 3 functional block diagram
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 4 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited circuit type package h: sot-223 adj: adjustable output 1.8: fixed output 1.8v az1117c - tr: tape and reel ordering information 3.3: fixed output 3.3v package temperature range part number marking id packing type sot-223 -20 to 125 o c az1117ch-adjtrg1 gh15b tape & reel az1117ch-1.2trg1 gh16b tape & reel az1117ch-1.5trg1 gh15c tape & reel az1117ch-1.8trg1 gh16c tape & reel az1117ch-2.5trg1 gh15d tape & reel az1117ch-3.3trg1 gh16d tape & reel az1117ch-5.0trg1 gh15e tape & reel to-252-2 (1) /to-252-2 (2) /to-252-2 (3) /to-252-2 (4) az1117cd-adjg1 az1117cd-adjg1 tube az1117cd-adjtrg1 az1117cd-adjg1 tape & reel az1117cd-1.2g1 az1117cd-1.2g1 tube az1117cd-1.2trg1 az1117cd-1.2g1 tape & reel az1117cd-1.5g1 az1117cd-1.5g1 tube az1117cd-1.5trg1 az1117cd-1.5g1 tape & reel az1117cd-1.8g1 az1117cd-1.8g1 tube az1117cd-1.8trg1 az1117cd-1.8g1 tape & reel az1117cd-2.5g1 az1117cd-2.5g1 tube az1117cd-2.5trg1 az1117cd-2.5g1 tape & reel az1117cd-3.3g1 az1117cd-3.3g1 tube az1117cd-3.3trg1 az1117cd-3.3g1 tape & reel az1117cd-5.0g1 az1117cd-5.0g1 tube az1117cd-5.0trg1 az1117cd-5.0g1 tape & reel 2.5: fixed output 2.5v g1: green 5.0: fixed output 5.0v 1.2: fixed output 1.2v 1.5: fixed output 1.5v blank: tube d: to-252-2 (1) /to-252-2 (2) /to-252-2 (3) r: sot-89 /to-252-2 (4)
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 5 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet ordering information (continued) package temperature range part number marking id packing type sot-89 -20 to 125 o c az1117cr-adjtrg1 g27n tape & reel az1117cr-1.2trg1 g28j tape & reel az1117cr-1.5trg1 g28k tape & reel az1117cr-1.8trg1 g28l tape & reel az1117cr-2.5trg1 g28m tape & reel az1117cr-3.3trg1 g28n tape & reel az1117cr-5.0trg1 g27m tape & reel bcd semiconductor's products, as designa ted with "g1" suffix in the part number, are rohs compliant and green.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 6 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited absolute maximum ratings (note 1) note 1: stresses greater than those listed under "absolute ma ximum ratings" may cause permanent damage to the device. these are stress ratings only, and functiona l operation of the device at these or a ny other conditions be yond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. parameter symbol value unit input voltage v in 18 v operating junction temperature range t j 150 o c storage temperature range t stg -65 to 150 o c thermal resistan ce (no heatsink) ja sot-89 210 o c/w sot-223 150 to-252-2 (1)/to-252-2 (2)/ to-252-2 (3)/to-252-2 (4) 128 lead temperature (soldering, 10sec) t lead 260 o c recommended oper ating conditions parameter symbol min max unit input voltage v in 15 v operating junction temperature range t j -20 125 o c
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 7 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit reference voltage v ref 1.238 1.250 1.262 v 1.5v v in -v out 10v 1.225 1.250 1.270 line regulation v rline 1.5v v in -v out 10v 0.001 0.1 % 0.2 load regulation v rload 0.4 1.0 % dropout voltage v drop ? v ref =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a adjust pin current 60 120 a adjust pin current change 1.5v ( v in -v out ) 10v 0.2 5 a minimum load current 1.5v ( v in -v out ) 10v 1.7 5 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics az1117c-adj electrical characteristics operating conditions: v in =v out +2v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junctio n temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 8 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 1.176 1.2 1.224 v 3.2v v in 10v 1.152 1.2 1.228 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics (continued) az1117c-1.2 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 9 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out 1.485 1.5 1.515 v 3.5v v in 10v 1.470 1.5 1.530 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics (continued) az1117c-1.5 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 10 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 1.782 1.8 1.818 v 3.8v v in 10v 1.764 1.8 1.836 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics (continued) az1117c-1.8 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 11 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out 2.475 2.5 2.525 v 4.5v v in 10v 2.455 2.5 2.545 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics (continued) az1117c-2.5 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 12 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 3.267 3.3 3.333 v 5.3v v in 10v 3.235 3.3 3.365 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics (continued) az1117c-3.3 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwis e specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 13 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out 4.950 5.0 5.050 v 6.5v v in 10v 4.900 5.0 5.100 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v current limit i limit 0.85 1 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance (junction to case) jc sot-89 39 o c/w sot-223 33 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 22 electrical characteristics (continued) az1117c-5.0 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwis e specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c.
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 14 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited typical performance characteristics figure 5. load regulation vs. junctiontemperature figure 4. line regulation vs. junction temperature figure 6. reference voltage vs. junction temperature figure 7. output voltage vs. junction temperature -20 0 20 40 60 80 100 120 1.220 1.225 1.230 1.235 1.240 1.245 1.250 1.255 1.260 1.265 1.270 az1117c-adj v in =4.5v i out =10ma reference voltage (v) junction temperature ( o c) -20 0 20 40 60 80 100 120 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 az1117c-2.5v v in =4.5v i out =10ma output voltage (v) junction temperature ( o c) -20 0 20 40 60 80 100 120 -25 -20 -15 -10 -5 0 5 10 load regulation (mv) junction temperature ( o c) az1117c-2.5v v in =4.5v i out =10ma to 800ma -20 0 20 40 60 80 100 120 -0.4 -0.2 0.0 0.2 0.4 line regulation (mv) junction temperature ( o c) az1117c-2.5v v in =4.5v to 10v i out =10ma
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 15 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet figure 11. power dissipation vs. case temperature figure 10. dropout voltage vs. output current typical performance ch aracteristics (continued) figure 8. minimum load current vs. junction temperature figure 9. adjust pin current vs. junction temperature 0 100 200 300 400 500 600 700 800 900 1000 0.8 0.9 1.0 1.1 1.2 1.3 1.4 dropout voltage (v) output current (ma) az1117c-2.5 v in =4.5v -40 o c -25 o c 25 o c 100 o c -20 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10 az1117c-2.5v package: sot-223 no heat sink power dissipation (w) case temperature ( o c) -20 0 20 40 60 80 100 120 -2 -1 0 1 2 3 az1117c-adj v in =4.5v minimum load current (ma) junction temperature ( o c) -20 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 90 100 az1117c-adj v in =4.5v adjust pin current ( a) junction temperature ( o c)
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 16 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited figure 12. line transient response figure 13. load transient response figure 14. psrr vs. frequency figure 15. cu rrent limit vs. junction temperature 10 100 1k 10k 100k 10 20 30 40 50 60 70 80 psrr (db) frequency (hz) typical performance ch aracteristics (continued) time (20 s/div) time (10 s/div) ? v out (0.1v/div) 5.3 4.8 v in ( 0 . 5 v / d i v ) -0.1 4.3 3.8 0.1 0.2 0 ? v out (50mv/div) i out (0.3a/div) 0.3 0 -50 -0.3 -0.6 50 100 0 0.6 10ma -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 current limit (a) junction temperature ( o c) az1117c-2.5v v in =4.5v no heat sink @v out =v out (nom)x98%
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 17 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 16. dropout voltage vs. junction temperature -20 0 20 40 60 80 100 0.8 0.9 1.0 1.1 1.2 1.3 1.4 dropout voltage (v) junction temperature ( o c) az1117c-2.5 100ma 400ma 600ma 800ma
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 18 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited typical applications figure 17. typical applications of az1117c az1117c- adj v in v out adj v in =11v 10 f r1 124 ? r2 768 ? 22 f 9v v in =5.3v az1117c-3.3 v in v out gnd 10 f 22 f 3.3 v v out =v ref * ( 1+r2/r1 ) + i adj * r2
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 19 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet mechanical dimensions sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) 2.900(0.114) 3.100(0.122) 0.610(0.024) 0.810(0.032) 2.300(0.091) typ 6.300(0.248) 6.700(0.264) 1.750(0.069) typ 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 1.500(0.059) 1.700(0.067) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 3 5 0 ( 0 . 0 1 4 ) 0.250(0.010) 0 10 0.900(0.035) min
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 20 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-89 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 21 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet mechanical dimens ions (continued) to-252-2 (1) unit: mm(inch) 1.350(0.053) 1.650(0.065) 0.600(0.024) 0.900(0.035) 4.500(0.177) 4.700(0.185) 3 4 3.800ref(0.150ref) 4.800(0.189) 6.500(0.256) 4.300(0.169) 5.400(0.213) 1.400(0.055) 1.780(0.070) 0.000(0.000) 0.127(0.005) 0.450(0.018) 0.580(0.023) 2.300typ 9.500(0.374) 9.900(0.390) 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 5.200(0.205) 5.400(0.213) 6.450(0.254) 6.650(0.262) 2.550(0.100) 2.900(0.114) 5.450(0.215) 6.250(0.246) 2.200(0.087) 2.400(0.094) 5 5 8 0.450(0.018) 0.580(0.023)
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 22 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited mechanical dimens ions (continued) to-252-2 (2) unit: mm(inch) 6.500(0.256) 6.700(0.264) 5.230(0.206) 5.430(0.214) 1.2 0.1 2.9ref 1.400(0.055) 1.700(0.067) 0 8 0.470(0.019) 0.600(0.024) 3 7 3 7 3 7 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 1 5 4.700ref 5.250ref 0.600(0.024) 1.000(0.039) 1.150(0.045) 1.500(0.059) 6.000(0.236) 6.200(0.244) 0.770(0.030) 0.890(0.035) 2.28bsc 0.770(0.030) 1.100(0.433) 0.900(0.035) 1.250(0.049) 1.80ref
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117c 23 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet mechanical dimens ions (continued) to-252-2 (3) unit: mm(inch) 1.290.1 2.900ref 1.400(0.055) 1.700(0.067) 0.470(0.019) 0.600(0.024) 5 9 0 8 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 4.700ref 5.250ref 6.500(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236) 6.200(0.244) 0.720(0.028) 0.850(0.033) 2.286(0.090) bsc 0.720(0.028) 0.900(0.035) 0.900(0.035) 1.250(0.049) 1.800ref 8 0 0.600(0.024) 1.000(0.039) 7 3 9 5
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117c 24 jan. 2012 rev. 1. 5 bcd semiconductor manufacturing limited mechanical dimens ions (continued) unit: mm(inch) to-252-2 (4) 5.460(0.215) 4.960(0.195) 6.350(0.250) 6.730(0.265) 1.200.05 1.900(0.075) 1.700(0.067) 6.220(0.245) 5.970(0.235) 1.270(0.050) 0.890(0.035) 1.492(0.059) 1.145(0.045) 1.010(0.040) 1.124(0.044) 0.765(0.030) 2.290(0.090) 0.640(0.025) 0.884(0.035) max bsc 10.340(0.407) 9.940(0.391) 0.600(0.024) 0.460(0.018) 2.380(0.094) 2.180(0.086) 4.320(0.170) min min 5.210(0.205) 15 0 3 3 0.780(0.031) 0.650(0.026) 0.884(0.035) 0.640(0.025) 0.460(0.018) 0.610(0.024) 0.410(0.016) 0.560(0.022) detail a 2.160(0.085) min base metal plating section b-b 0.020(0.001) 0.120(0.005) 2.740(0.108) 1.500(0.059) ref 1.780(0.070) 0 10 seating plane gauge plane b b
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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